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TSV PLATING ADDITIVES
MLI's research and development activities include the development of plating additive and processes for Cu filling of through-Si Vias (TSV).
The primary goal is the reduction of the time for complete via fill to reduce the overall cost of consumables for 3-D packaging.
Our accelerator, suppressor and levelers are being developed to control the plating rate at the field, upper corners, and side walls,
leading to void-free bottom-up fill.
 VERTICAL LINE TSV ADDITIVES
MLI is actively developing advanced TSV additives for high aspect ratio vias.
MLI is developing additives that provide high rate bottom-up fill, reduced field plating,
and excellent planarization.
 TSV RESEARCH ACTIVITIES
MLI's research and development includes activities on future generation applications such as wet liner/seed processes as alternative
to PVD barrier/seed processes for very high aspect ratio vias.
For more information on our TSV development activities, please contact us.
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