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Copper Plating Chemistry | Moses Lake Industries

Copper Plating Electrolytes and Additives

Moses Lake Industries' unique in-house production processes enable us to produce high purity electrolyte and organic additives at competitive cost.

Damascene

MLI’s Vertical A chemistry for Damascene includes accelerator, suppressor and leveler additives with electrolyte available.  Vertical A organic additives achieve fast filling with low defects and high deposit purity.  

Chip Substrate Plating (CSP)

Our CSP chemistry includes accelerator, suppressor, leveler and electrolyte.  CSP organic additives achieve fast filling with low defects and high uniformity.   In addition to chip substrate plating, MLI’s chemistry also supports laser through hole plating.

Through Silicon Via (TSV)

MLI’s TSV chemistries include fast filling, high purity accelerator, suppressor, and leveler organic additives.  The chemistry is based on a high purity sulfuric acid, copper sulfate based electrolyte.  The combination of organic additives and electrolyte allows for a highly economical chemistry that provides fast, bottom-up fill of TSV’s with high deposit purity.

Wafer Level Packaging (WLP)

MLI offers a variety of chemistries for wafer level packaging for both Bump and RDL.   Product chemistry includes accelerator, suppressor, leveler and electrolyte and is optimized to meet varying customer-specific performance requirements. Additives are available at custom concentrations to support customer-specific performance requirements.

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